Preface XVII -- 1 Introduction 1 -- 1.1 Surface and Interfaces in Everyday Life 1 -- 1.2 Surfaces and Interfaces in Electronics Technology 2 -- 2 Historical Background 9 -- 2.1 Contact Electrification and the Development of Solid-State Concepts 9 -- 2.2 High-Purity Semiconductor Crystals 10 -- 2.3 Development of the Transistor 10 -- 2.4 The Surface Science Era 12 -- 2.5 Advances in Crystal Growth Techniques 13 -- 2.6 Future Electronics 15 -- 3 Electrical Measurements 19 -- 3.1 Schottky Barrier Overview 19 -- 3.2 Ideal Schottky Barriers 20 -- 3.3 Real Schottky Barriers 22 -- 3.4 Schottky Barrier Height Measurements 25 -- 3.5 Summary 33 -- 4 Interface States 37 -- 4.1 Interface State Models 37 -- 4.2 Simple Model Calculation of Electronic Surface States 39 -- 4.3 Intrinsic Surface States 42 -- 4.4 Extrinsic Surface States 52 -- 4.5 Chapter Summary 62 -- 5 Ultrahigh Vacuum Technology 67 -- 5.1 Ultrahigh Vacuum Vessels 67 -- 5.2 Pumps 70 -- 5.3 Specimen Manipulators 76 -- 5.4 Gauges 76 -- 5.5 Deposition Sources 77 -- 5.6 Deposition Monitors 79 -- 5.7 Summary 80 -- 6 Surface and Interface Analysis 83 -- 6.1 Surface and Interface Techniques 83 -- 6.2 Excited Electron Spectroscopies 85 -- 6.3 Principles of Surface Sensitivity 88 -- 6.4 Surface Analytic and Processing Chambers 89 -- 6.5 Summary 92 -- 7 Photoemission Spectroscopy 93 -- 7.1 The Photoelectric Effect 93 -- 7.2 The Optical Excitation Process 95 -- 7.3 Photoionization Cross Section 95 -- 7.4 Density of States 96 -- 7.5 Experimental Spectrum 96 -- 7.6 Experimental Energy Distribution Curves 97 -- 7.7 Measured Photoionization Cross Sections 100 -- 7.8 Principles of X-ray Photoelectron Spectroscopy 112 -- 7.9 Excitation Sources 119 -- 7.10 Electron Energy Analyzers 122 -- 7.11 Summary 125 -- 8 Photoemission with Soft X-rays 129 -- 8.1 Soft X-ray Spectroscopy Techniques 129 -- 8.2 Synchrotron Radiation Sources 129 -- 8.3 Soft X-Ray Photoemission Spectroscopy 132 -- 8.4 Related Soft X-ray Techniques 141 -- 8.5 Summary 143.

9 Particle-Solid Scattering 147 -- 9.1 Overview 147 -- 9.2 Scattering Cross Section 147 -- 9.3 Electron Beam Spectroscopies 151 -- 9.4 Auger Electron Spectroscopy 153 -- 9.5 Auger Depth Profiling 163 -- 10 Electron Energy Loss Spectroscopy 169 -- 10.1 Overview 169 -- 10.2 Dielectric Response Theory 171 -- 10.3 Surface Phonon Scattering 172 -- 10.4 Bulk and Surface Plasmon Scattering 174 -- 10.5 Interface Electronic Transitions 177 -- 10.6 Atomic-Scale Electron Energy Loss Spectroscopy 180 -- 10.7 Summary 181 -- 11 Rutherford Backscattering Spectrometry 183 -- 11.1 Overview 183 -- 11.2 Theory of Rutherford Backscattering 184 -- 11.3 Depth Profiling 187 -- 11.4 Channeling and Blocking 190 -- 11.5 Interface Studies 192 -- 11.6 Summary 195 -- 12 Secondary Ion Mass Spectrometry 197 -- 12.1 Overview 197 -- 12.2 Principles 197 -- 12.3 SIMS Equipment 199 -- 12.4 Secondary Ion Yields 203 -- 12.5 Imaging 206 -- 12.6 Dynamic SIMS 207 -- 12.7 Organic and Biological Species 211 -- 12.8 Summary 211 -- 13 Electron Diffraction 213 -- 13.1 Overview 213 -- 13.2 Principles of Low-Energy Electron Diffraction 213 -- 13.3 LEED Equipment 215 -- 13.4 LEED Kinematics 216 -- 13.5 Surface Reconstruction 217 -- 13.6 Surface Lattices and Superstructures 219 -- 13.7 Silicon Reconstructions 221 -- 13.8 III-V Compound Semiconductor Reconstructions 223 -- 13.9 Reflection High-Energy Electron Diffraction 227 -- 13.8.1 RHEED Oscillations 232 -- 13.9 Summary 233 -- 14 Scanning Tunneling Microscopy 237 -- 14.1 Overview 237 -- 14.2 Tunneling Theory 239 -- 14.3 Surface Structure 244 -- 14.4 Atomic Force Microscopy 246 -- 14.5 Ballistic Electron Emission Microscopy 249 -- 14.6 Atomic Positioning 252 -- 14.7 Summary 253 -- 15 Optical Spectroscopies 257 -- 15.1 Overview 257 -- 15.2 Optical Absorption 257 -- 15.3 Modulation Techniques 260 -- 15.4 Multiple Surface Interaction Techniques 262 -- 15.5 Spectroscopic Ellipsometry 263 -- 15.6 Surface-Enhanced Raman Spectroscopy 264 -- 15.7 Surface Photoconductivity 267.

15.8 Surface Photovoltage Spectroscopy 268 -- 15.9 Summary 276 -- 16 Cathodoluminescence Spectroscopy 279 -- 16.1 Overview 279 -- 16.2 Theory 281 -- 16.3 Monte Carlo Simulations 291 -- 16.4 Depth-Resolved Cathodoluminescence Spectroscopy 293 -- 16.5 Summary 302 -- 17 Electronic Materials' Surfaces 305 -- 17.1 Overview 305 -- 17.2 Geometric Structure 305 -- 17.3 Chemical Structure 311 -- 17.4 Etching 318 -- 17.5 Electronic Implications 323 -- 17.6 Summary 323 -- 18 Adsorbates on Electronic Materials' Surfaces 327 -- 18.1 Overview 327 -- 18.2 Geometric Structure 327 -- 18.3 Chemical Properties 336 -- 18.4 Electronic Properties 346 -- 18.5 Summary 356 -- 19 Adsorbate-Semiconductor Sensors 365 -- 19.1 Adsorbate-Surface Charge Transfer 365 -- 19.2 Sensors 370 -- 19.3 Summary 379 -- 20 Semiconductor Heterojunctions 383 -- 20.1 Overview 383 -- 20.2 Geometric Structure 383 -- 20.3 Chemical Structure 397 -- 20.4 Electronic Structure 402 -- 20.5 Summary 439 -- 21 Metals on Semiconductors 447 -- 21.1 Overview 447 -- 21.2 Metal-Semiconductor Interface Dipoles 448 -- 21.3 Interface States 449 -- 21.4 Self-Consistent Electrostatic Calculations 467 -- 21.5 Fermi-Level Pinning Models 471 -- 21.6 Experimental Schottky Barriers 471 -- 21.7 Interface Passivation and Control 492 -- 21.8 Summary 514 -- 22 The Future of Interfaces 523 -- 22.1 Current Status 523 -- 22.2 Current Device Applications and Challenges 525 -- 22.3 New Directions 528 -- 22.4 Synopsis 536 -- Appendices 539 -- Appendix 1: Glossary of Commonly Used Symbols 541 -- Appendix 2: Table of Acronyms 544 -- Appendix 3: Table of Physical Constants and Conversion Factors 548 -- Appendix 4: Semiconductor Properties 549 -- Appendix 5: Table of Preferred Work Functions 551 -- Appendix 6: Derivation of Fermi's Golden Rule 552 -- Appendix 7: Derivation of Photoemission Cross Section for a Square Well 555 -- Index 557.