Foreword xi -- Preface xiii -- Contributors xvii -- Acknowledgments xix -- Introduction: Historic Timeline xxi -- PART I BASIC ELECTRON DEVICES -- 1 Bipolar Transistors 3 / John D. Cressler and Katsuyoshi Washio -- 1.1 Motivation 3 -- 1.2 The pn Junction and its Electronic Applications 5 -- 1.3 The Bipolar Junction Transistor and its Electronic Applications 10 -- 1.4 Optimization of Bipolar Transistors 15 -- 1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17 -- References 19 -- 2 MOSFETs 21 / Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong -- 2.1 Introduction 21 -- 2.2 MOSFET Basics 21 -- 2.3 The Evolution of MOSFETs 27 -- 2.4 Closing Remarks 31 -- References 31 -- 3 Memory Devices 37 / Kinam Kim and Dong Jin Jung -- 3.1 Introduction 37 -- 3.2 Volatile Memories 39 -- 3.3 Non-Volatile Memories 41 -- 3.4 Future Perspectives of MOS Memories 43 -- 3.5 Closing Remarks 45 -- References 46 -- 4 Passive Components 49 / Joachim N. Burghartz and Colin C. McAndrew -- 4.1 Discrete and Integrated Passive Components 49 -- 4.2 Application in Analog ICs and DRAM 52 -- 4.3 The Planar Spiral Inductor-A Case Study 54 -- 4.4 Parasitics in Integrated Circuits 57 -- References 57 -- 5 Emerging Devices 59 / Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh -- 5.1 Non-Charge-Based Switching 59 -- 5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63 -- 5.3 Closing Remarks 66 -- References 67 -- PART II ASPECTS OF DEVICE AND IC MANUFACTURING -- 6 Electronic Materials 71 / James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu -- 6.1 Introduction 71 -- 6.2 Silicon Device Technology 71 -- 6.3 Compound Semiconductor Devices 75 -- 6.4 Electronic Displays 79 -- 6.5 Closing Remarks 82 -- References 83 -- 7 Compact Modeling 85 / Colin C. McAndrew and Laurence W. Nagel -- 7.1 The Role of Compact Models 85 -- 7.2 Bipolar Transistor Compact Modeling 87 -- 7.3 MOS Transistor Compact Modeling 89 -- 7.4 Compact Modeling of Passive Components 92.

7.5 Benchmarking and Implementation 94 -- References 94 -- 8 Technology Computer Aided Design 97 / David Esseni, Christoph Jungemann, JŠ urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi -- 8.1 Introduction 97 -- 8.2 Drift-Diffusion Model 98 -- 8.3 Microscopic Transport Models 100 -- 8.4 Quantum Transport Models 101 -- 8.5 Process and Equipment Simulation 102 -- References 105 -- 9 Reliability of Electron Devices, Interconnects and Circuits 107 / Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak -- 9.1 Introduction and Background 107 -- 9.2 Device Reliability Issues 109 -- 9.3 Circuit-Level Reliability Issues 114 -- 9.4 Microscopic Approaches to Assuring Reliability of ICs 117 -- References 117 -- 10 Semiconductor Manufacturing 121 / Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold -- 10.1 Introduction 121 -- 10.2 Substrates 122 -- 10.3 Lithography and Etching 122 -- 10.4 Front-End Processing 124 -- 10.5 Back-End Processing 125 -- 10.6 Process Control 128 -- 10.7 Assembly and Test 129 -- 10.8 Future Directions 131 -- References 131 -- PART III APPLICATIONS BASED ON ELECTRON DEVICES -- 11 VLSI Technology and Circuits 135 / Kaustav Banerjee and Shuji Ikeda -- 11.1 Introduction 135 -- 11.2 MOSFET Scaling Trends 136 -- 11.3 Low-Power and High-Speed Logic Design 137 -- 11.4 Scaling Driven Technology Enhancements 139 -- 11.5 Ultra-Low Voltage Transistors 144 -- 11.6 Interconnects 144 -- 11.7 Memory Design 148 -- 11.8 System Integration 150 -- References 152 -- 12 Mixed-Signal Technologies and Integrated Circuits 157 / Bin Zhao and James A. Hutchby -- 12.1 Introduction 157 -- 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159 -- 12.3 Data Converter ICs 161 -- 12.4 Mixed-Signal Circuits for Low Power Displays 164 -- 12.5 Image Sensor Technologies and Circuits 166 -- References 168 -- 13 Memory Technologies 171 / Stephen Parke, Kristy A. Campbell and Chandra Mouli -- 13.1 Semiconductor Memory History 171.

13.2 State of Mainstream Semiconductor Memory Today 178 -- 13.3 Emerging Memory Technologies 183 -- 13.4 Closing Remarks 185 -- References 186 -- 14 RF and Microwave Semiconductor Technologies 189 / Giovanni Ghione, Fabrizio Bonani, Ruediger Quay and Erich Kasper -- 14.1 III-V-Based: GaAs and InP 189 -- 14.2 Si and SiGe 194 -- 14.3 Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond) 197 -- References 199 -- 15 Power Devices and ICs 203 / Richard K. Williams, Mohamed N. Darwish, Theodore J. Letavic and Mikael OŠ stling -- 15.1 Overview of Power Devices and ICs 203 -- 15.2 Two-Carrier and High-Power Devices 205 -- 15.3 Power MOSFET Devices 206 -- 15.4 High-Voltage and Power ICs 209 -- 15.5 Wide Bandgap Power Devices 210 -- References 211 -- 16 Photovoltaic Devices 213 / Steven A. Ringel, Timothy J. Anderson, Martin A. Green, Rajendra Singh and Robert J. Walters -- 16.1 Introduction 213 -- 16.2 Silicon Photovoltaics 215 -- 16.3 Polycrystalline Thin-Film Photovoltaics 218 -- 16.4 III-V Compound Photovoltaics 219 -- 16.5 Future Concepts in Photovoltaics 220 -- References 222 -- 17 Large Area Electronics 225 / Arokia Nathan, Arman Ahnood, Jackson Lai and Xiaojun Guo -- 17.1 Thin-Film Solar Cells 225 -- 17.2 Large Area Imaging 229 -- 17.3 Flat Panel Displays 233 -- References 235 -- 18 Microelectromechanical Systems (MEMS) 239 / Darrin J. Young and Hanseup Kim -- 18.1 Introduction 239 -- 18.2 The 1960s - First Micromachined Structures Envisioned 239 -- 18.3 The 1970s - Integrated Sensors Started 240 -- 18.4 The 1980s - Surface Micromachining Emerged 241 -- 18.5 The 1990s - MEMS Impacted Various Fields 244 -- 18.6 The 2000s - Diversified Sophisticated Systems Enabled by MEMS 247 -- 18.7 Future Outlook 248 -- References 248 -- 19 Vacuum Device Applications 251 / David K. Abe, Baruch Levush, Carter M. Armstrong, Thomas Grant and William L. Menninger -- 19.1 Introduction 251 -- 19.2 Traveling-Wave Devices 252 -- 19.3 Klystrons 255 -- 19.4 Inductive Output Tubes 258.

19.5 Crossed-Field Devices 259 -- 19.6 Gyro-Devices 260 -- References 262 -- 20 Optoelectronic Devices 265 / Leda Lunardi, Sudha Mokkapati and Chennupati Jagadish -- 20.1 Introduction 265 -- 20.2 Light Emission in Semiconductors 266 -- 20.3 Photodetectors 268 -- 20.4 Integrated Optoelectronics 269 -- 20.5 Optical Interconnects 271 -- 20.6 Closing Remarks 271 -- References 271 -- 21 Devices for the Post CMOS Era 275 / Wilfried Haensch -- 21.1 Introduction 275 -- 21.2 Devices for the 8-nm Node with Conventional Materials 277 -- 21.3 New Channel Materials and Devices 282 -- 21.4 Closing Remarks 287 -- References 287 -- Index 291.