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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
Başlık:
Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
Yazar:
Cheng, Jie. author.
ISBN:
9789811061653
Yazar:
Edisyon:
1st ed. 2018.
Fiziksel Niteleme:
XVIII, 137 p. 103 illus. online resource.
Seri:
Springer Theses, Recognizing Outstanding Ph.D. Research,
Özet:
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
Konu Başlığı:
Ek Kurum Yazar:
Elektronik Erişim:
https://doi.org/10.1007/978-981-10-6165-3